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Alliance Memory, Inc.

Новые продукты Alliance Memory, Inc.
Вид Наименование
AS4C8M16S-7TCN AS4C8M16S-7TCN
IC DRAM 128M PARALLEL 54TSOP
AS4C8M16S-7TCNTR AS4C8M16S-7TCNTR
IC DRAM 128M PARALLEL 54TSOP
AS4C8M16SA-6BAN AS4C8M16SA-6BAN
IC: память DRAM; 128МбDRAM; 2Mx16битx4; 3,3В; 166МГц; 5,4нс; FBGA54
AS4C8M16SA-6BANTR AS4C8M16SA-6BANTR
IC: память DRAM; 128МбDRAM; 2Mx16битx4; 3,3В; 166МГц; 5,4нс; FBGA54
AS4C8M16SA-6BIN AS4C8M16SA-6BIN
IC: память DRAM; 128МбDRAM; 2Mx16битx4; 3,3В; 166МГц; 5,4нс; FBGA54
AS4C8M16SA-6BINTR AS4C8M16SA-6BINTR
IC: память DRAM; 128МбDRAM; 2Mx16битx4; 3,3В; 166МГц; 5,4нс; FBGA54
AS4C8M16SA-6TAN AS4C8M16SA-6TAN
IC: память DRAM; 128МбDRAM; 2Mx16битx4; 3,3В; 166МГц; 5,4нс; лоток
AS4C8M16SA-6TANTR AS4C8M16SA-6TANTR
IC: память DRAM; 128МбDRAM; 2Mx16битx4; 3,3В; 166МГц; 5,4нс; бобина
AS4C8M16SA-6TCN AS4C8M16SA-6TCN
IC: память DRAM; 128МбDRAM; 2Mx16битx4; 3,3В; 166МГц; 5,4нс; 0÷70°C
AS4C8M16SA-6TCNTR AS4C8M16SA-6TCNTR
IC: память DRAM; 128МбDRAM; 2Mx16битx4; 3,3В; 166МГц; 5,4нс; 0÷70°C
AS4C8M16SA-6TIN AS4C8M16SA-6TIN
IC: память DRAM; 128МбDRAM; 2Mx16битx4; 3,3В; 166МГц; 5,4нс; лоток
AS4C8M16SA-6TINTR AS4C8M16SA-6TINTR
IC: память DRAM; 128МбDRAM; 2Mx16битx4; 3,3В; 166МГц; 5,4нс; бобина
AS4C8M16SA-7BCN AS4C8M16SA-7BCN
IC: память DRAM; 128МбDRAM; 2Mx16битx4; 3,3В; 143МГц; 5,4нс; FBGA54
AS4C8M16SA-7BCNTR AS4C8M16SA-7BCNTR
IC: память DRAM; 128МбDRAM; 2Mx16битx4; 3,3В; 143МГц; 5,4нс; FBGA54
AS4C8M16SA-7TCN AS4C8M16SA-7TCN
IC: память DRAM; 128МбDRAM; 2Mx16битx4; 3,3В; 143МГц; 5,4нс; 0÷70°C
AS4C8M16SA-7TCNTR AS4C8M16SA-7TCNTR
IC: память DRAM; 128МбDRAM; 2Mx16битx4; 3,3В; 143МГц; 5,4нс; 0÷70°C
AS4C8M32MSA-6BIN AS4C8M32MSA-6BIN
IC DRAM 256M PARALLEL 90FBGA
AS4C8M32MSA-6BINTR AS4C8M32MSA-6BINTR
IC DRAM 256M PARALLEL 90FBGA
AS4C8M32S-6BIN AS4C8M32S-6BIN
IC DRAM 256M PARALLEL 90TFBGA
AS4C8M32S-6BINTR AS4C8M32S-6BINTR
IC DRAM 256M PARALLEL 90TFBGA