Alliance Memory, Inc.
Новые продукты Alliance Memory, Inc.
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AS4C32M16SB-6TINTR IC: память DRAM; 512МбDRAM; 8Mx16битx4; 3,3В; 166МГц; 5нс; -40÷85°C |
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AS4C32M16SB-7TCN IC: память DRAM; 512МбDRAM; 8Mx16битx4; 3,3В; 143МГц; 5,4нс; 0÷70°C |
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AS4C32M16SB-7TCNTR IC: память DRAM; 512МбDRAM; 8Mx16битx4; 3,3В; 143МГц; 5,4нс; 0÷70°C |
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AS4C32M16SB-7TIN IC: память DRAM; 512МбDRAM; 8Mx16битx4; 3,3В; 143МГц; 5,4нс; лоток |
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AS4C32M16SB-7TINTR IC: память DRAM; 512МбDRAM; 8Mx16битx4; 3,3В; 143МГц; 5,4нс; бобина |
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AS4C32M16SM-7TCN IC DRAM 512M PARALLEL 54TSOP |
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AS4C32M16SM-7TCNTR IC DRAM 512M PARALLEL 54TSOP |
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AS4C32M16SM-7TIN IC DRAM 512M PARALLEL 54TSOP |
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AS4C32M16SM-7TINTR IC DRAM 512M PARALLEL 54TSOP |
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AS4C32M32MD1-5BCN IC DRAM 1G PARALLEL 90FBGA |
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AS4C32M32MD1-5BCNTR IC DRAM 1G PARALLEL 90FBGA |
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AS4C32M32MD1-5BIN IC DRAM 1G PARALLEL 90FBGA |
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AS4C32M32MD1-5BINTR IC DRAM 1G PARALLEL 90FBGA |
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AS4C32M32MD1A-5BIN IC: память DRAM; 1024МбDRAM; 32Mx32бит; 1,7÷1,95В; 200МГц; 6нс |
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AS4C32M32MD1A-5BINTR IC: память DRAM; 512МбDRAM; 32Mx16бит; 1,8В; 200МГц; 15нс; FPBGA60 |
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AS4C32M32MD2-25BCN IC DRAM 1G PARALLEL 134FBGA |
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AS4C32M32MD2-25BCNTR IC DRAM 1G PARALLEL 134FBGA |
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AS4C32M32MD2A-25BCN IC DRAM 1G PARALLEL 134FBGA |
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AS4C32M32MD2A-25BCNTR IC DRAM 1G PARALLEL 134FBGA |
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AS4C32M8D1-5TCN IC: память DRAM; 256МбDRAM; 32Mx8бит; 2,5В; 200МГц; 15нс; TSOP66 II |